Specification	R6515KNX3C16

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	161 W
Rds On (Max) @ Id, Vgs	315 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

R6515KNX3 Series

650V 15A, TO-220AB, High-speed switching Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Operating Temperature	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor R6515KNX3C16	15 A	161 W	MOSFET (Metal Oxide)	150 °C	20 V	TO-220AB	315 mOhm	Through Hole	10 V	650 V	5 V	N-Channel	TO-220-3	27.5 nC	1050 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	376	$ 1.77
	Tube	1	$ 1.71
		50	$ 1.50
		100	$ 1.46
		500	$ 0.79
		2000	$ 0.73
		5000	$ 0.69
Mouser	N/A	1	$ 1.68
		10	$ 1.67
		25	$ 1.54
Newark	Each	1	$ 1.90
		10	$ 1.77
		25	$ 1.64

Description

General part information

R6515KNX3 Series

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Documents

Technical documentation and resources

R6515KNX3C16

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R6515KNX3C16

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Technical Specifications

R6515KNX3 Series

Pricing

Description

R6515KNX3 Series

Documents

What is a Thermal Model? (Transistor)

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Moisture Sensitivity Level - Transistors

Two-Resistor Model for Thermal Simulation

Impedance Characteristics of Bypass Capacitor

Part Explanation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Method for Monitoring Switching Waveform

List of Transistor Package Thermal Resistance

Basics of Thermal Resistance and Heat Dissipation

R6515KNX3 Data Sheet

R6515KNX3 ESD Data

How to Use LTspice&reg; Models

Compliance of the RoHS directive

How to Use LTspice&reg; Models: Tips for Improving Convergence

TO-220AB Packing Information

Notes for Calculating Power Consumption:Static Operation

Precautions When Measuring the Rear of the Package with a Thermocouple

Types and Features of Transistors

Measurement Method and Usage of Thermal Resistance RthJC

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Calculation of Power Dissipation in Switching Circuit

Condition of Soldering / Land Pattern Reference

TO-220AB Explanation for Marking

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Notes for Temperature Measurement Using Thermocouples

Report of SVHC under REACH Regulation

MOSFET Gate Resistor Setting for Motor Driving

Temperature derating method for Safe Operating Area (SOA)

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Anti-Whisker formation - Transistors

How to Use the Thermal Resistance and Thermal Characteristics Parameters

TO-220AB Inner Structure

Judgment Criteria of Thermal Evaluation

Importance of Probe Calibration When Measuring Power: Deskew

TO-220AB Reliability Test Result

TO-220AB Dimension

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

PCB Layout Thermal Design Guide

About Export Regulations

About Flammability of Materials

What Is Thermal Design

MOSFET Gate Drive Current Setting for Motor Driving

Notes for Temperature Measurement Using Forward Voltage of PN Junction

R6515KNX3 Series

How to Use LTspice® Models

How to Use LTspice® Models: Tips for Improving Convergence