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Toshiba-RN2302(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
Discrete Semiconductor Products

SSM3K16FU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-323(USM)

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Toshiba-RN2302(TE85L,F) Digital BJT - Pre-Biased Trans Digital BJT PNP 50V 0.1A 100mW 3-Pin USM T/R Automotive AEC-Q101
Discrete Semiconductor Products

SSM3K16FU,LF

Active
Toshiba Semiconductor and Storage

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH MOSFET, 20 V, 0.1 A, 3.0 Ω@4V, SOT-323(USM)

Technical Specifications

Parameters and characteristics for this part

SpecificationSSM3K16FU,LF
Current - Continuous Drain (Id) @ 25°C100 mA
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds9.3 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-323, SC-70
Power Dissipation (Max) [Max]150 mW
Rds On (Max) @ Id, Vgs3 Ohm
Supplier Device PackageUSM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.24
10$ 0.14
100$ 0.09
500$ 0.07
1000$ 0.06
Digi-Reel® 1$ 0.24
10$ 0.14
100$ 0.09
500$ 0.07
1000$ 0.06
N/A 13894$ 0.24
Tape & Reel (TR) 3000$ 0.05
6000$ 0.04
9000$ 0.04
15000$ 0.04
21000$ 0.04
30000$ 0.03
75000$ 0.03
150000$ 0.03
300000$ 0.03

Description

General part information

SSM3K16 Series

N-Channel 20 V 100mA (Ta) 150mW (Ta) Surface Mount USM