Discrete Semiconductor Products
TK12V60W,LVQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.3 Ω@10V, DFN 8 X 8, DTMOSⅣ
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Discrete Semiconductor Products
TK12V60W,LVQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.3 Ω@10V, DFN 8 X 8, DTMOSⅣ
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Technical Specifications
Parameters and characteristics for this part
| Specification | TK12V60W,LVQ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 890 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) @ Id, Vgs [Max] | 300 mOhm |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 3.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.24 | |
Description
General part information
TK12V60W Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.3 Ω@10V, DFN 8 x 8, DTMOSⅣ
Documents
Technical documentation and resources