Discrete Semiconductor Products

BFP640H6327XTSA1

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BIPOLAR - RF TRANSISTOR, NPN, 4.7 V, 42 GHZ, 200 MW, 50 MA, SOT-343

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Discrete Semiconductor Products

Active

BIPOLAR - RF TRANSISTOR, NPN, 4.7 V, 42 GHZ, 200 MW, 50 MA, SOT-343

Technical Specifications

Parameters and characteristics for this part

Specification	BFP640H6327XTSA1

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	110
Frequency - Transition	40 GHz
Gain	12.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.2 dB
Noise Figure (dB Typ @ f) [Min]	0.65 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Power - Max [Max]	200 mW
Supplier Device Package	PG-SOT343-3D
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	4.5 V

Part	Power - Max [Max]	Transistor Type	Supplier Device Package	Operating Temperature	Package / Case	Gain	Current - Collector (Ic) (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Gain [Max]	Gain [Min]
INFINEON BFP640FE6327	200 mW	NPN	4-TSFP	150 °C	4-SMD Flat Leads	23 dBi	50 mA	Surface Mount	110	0.65 dB	1.2 dB	4.5 V	40 GHz
INFINEON BFP640H6327XTSA1	200 mW	NPN	PG-SOT343-3D	150 °C	SC-82A SOT-343	12.5 dBi	50 mA	Surface Mount	110	0.65 dB	1.2 dB	4.5 V	40 GHz
INFINEON BFP640ESDH6327XTSA1	200 mW	NPN	PG-SOT343-4-2	150 °C	SC-82A SOT-343		50 mA	Surface Mount	110	0.6 dB	2 dB	4.7 V	46 GHz	30 dB	7 dB
INFINEON BFP640FESDH6327XTSA1	200 mW	NPN	4-TSFP	150 °C	4-SMD Flat Leads		50 mA	Surface Mount	110	0.55 dB	1.7 dB	4.7 V	46 GHz	30.5 dB	8 B

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General part information

RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-3D

Technical documentation and resources