Discrete Semiconductor Products

RJK6015DPM-00#T1

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MOSFET N-CH 600V 21A TO3PFM

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Discrete Semiconductor Products

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MOSFET N-CH 600V 21A TO3PFM

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6015DPM-00#T1

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs [Max]	360 mOhm
Supplier Device Package	TO-3PFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Rds On (Max) @ Id, Vgs [Max]
Renesas Electronics Corporation RJK6015DPK-00#T0	150 W	TO-3P	30 V	600 V	10 V	N-Channel	SC-65-3 TO-3P-3	150 °C	21 A	2600 pF	Through Hole	MOSFET (Metal Oxide)	360 mOhm
Renesas Electronics Corporation RJK6015DPM-00#T1	60 W	TO-3PFM	30 V	600 V	10 V	N-Channel	TO-220-3 Full Pack	150 °C	21 A	2600 pF	Through Hole	MOSFET (Metal Oxide)	360 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 21A (Ta) 60W (Tc) Through Hole TO-3PFM

Technical documentation and resources