Discrete Semiconductor Products

GBPC5008W-G

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BRIDGE RECT 1P 800V 50A GBPC-W

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Discrete Semiconductor Products

Active

BRIDGE RECT 1P 800V 50A GBPC-W

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC5008W-G

Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	GBPC-W, 4-Square
Supplier Device Package	GBPC-W
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	800 V

Part	Package / Case	Mounting Type	Diode Type	Supplier Device Package	Current - Average Rectified (Io)	Technology	Voltage - Peak Reverse (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]
Comchip Technology GBPC5008-G	4-Square GBPC	QC Terminal	Single Phase	GBPC	50 A	Standard	800 V	10 µA	1.1 V	-55 °C	150 °C
Comchip Technology GBPC5008W-G	4-Square GBPC-W	Through Hole	Single Phase	GBPC-W	50 A	Standard	800 V	10 µA	1.1 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBPC-W

Technical documentation and resources

No documents available