Discrete Semiconductor Products

GB10MPS17-247

NRND

DIODE SIL CARB 1.7KV 50A TO247-2

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Discrete Semiconductor Products

NRND

DIODE SIL CARB 1.7KV 50A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GB10MPS17-247

Capacitance @ Vr, F	669 pF
Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	12 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Current - Average Rectified (Io)	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr
GeneSiC Semiconductor GB10MPS17-247	50 A	Through Hole	0 ns	TO-247-2	669 pF	1700 V	1.8 V	500 mA	TO-247-2	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	12 µA

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General part information

Diode 1700 V 50A Through Hole TO-247-2

Technical documentation and resources