Discrete Semiconductor Products

NTD24N06L-1G

Obsolete

MOSFET N-CH 60V 24A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 24A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	NTD24N06L-1G

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1140 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	62.5 W, 1.36 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Single N-Channel Logic Level Power MOSFET 60V, 24A, 45mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology
ON Semiconductor NTD24N06-1G	24 A	10 V	N-Channel	1200 pF	20 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	48 nC	42 mOhm	IPAK	4 V	-55 °C	175 ░C	1.36 W 62.5 W	60 V	MOSFET (Metal Oxide)
ON Semiconductor NTD24N06LT4G	24 A	5 V	N-Channel	1140 pF	15 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	32 nC	45 mOhm	DPAK	2 V	-55 °C	175 ░C	1.36 W 62.5 W	60 V	MOSFET (Metal Oxide)
ON Semiconductor NTD24N06T4G	24 A	10 V	N-Channel	1200 pF	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	48 nC	42 mOhm	DPAK	4 V	-55 °C	175 ░C	1.36 W 62.5 W	60 V	MOSFET (Metal Oxide)
ON Semiconductor NTD24N06L-001	24 A	5 V	N-Channel	1140 pF	15 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	32 nC	45 mOhm	IPAK	2 V	-55 °C	175 ░C	1.36 W 62.5 W	60 V	MOSFET (Metal Oxide)
ON Semiconductor NTD24N06L-1G	24 A	5 V	N-Channel	1140 pF	15 V	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	32 nC	45 mOhm	IPAK	2 V	-55 °C	175 ░C	1.36 W 62.5 W	60 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Technical documentation and resources