Discrete Semiconductor Products

FJP9100TU

Obsolete

TRANS NPN DARL 275V 4A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN DARL 275V 4A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	FJP9100TU

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220-3
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	275 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Package / Case	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor FJP9100TU	100 µA	1.5 V	275 V	150 °C	4 A	TO-220-3	40 W	TO-220-3	Through Hole	1000

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 275 V 4 A 40 W Through Hole TO-220-3

Technical documentation and resources