Discrete Semiconductor Products

RFP40N10

Obsolete

MOSFET N-CH 100V 40A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 40A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	RFP40N10

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	300 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type
ON Semiconductor RFP40N10	MOSFET (Metal Oxide)	TO-220-3	40 mOhm	4 V	N-Channel	10 V	TO-220-3	300 nC	100 V	-55 °C	175 ░C	20 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 40A (Tc) 160W (Tc) Through Hole TO-220-3

Technical documentation and resources