Discrete Semiconductor Products

PMZB320UPEYL

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MOSFET P-CH 30V 1A DFN1006B-3

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Discrete Semiconductor Products

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MOSFET P-CH 30V 1A DFN1006B-3

Technical Specifications

Parameters and characteristics for this part

Specification	PMZB320UPEYL

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	122 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	350 mW, 6.25 W
Rds On (Max) @ Id, Vgs	510 mOhm
Supplier Device Package	DFN1006B-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMZB320UPEYL	3-XFDFN	P-Channel	30 V	510 mOhm	1.4 nC	1 A	Surface Mount	MOSFET (Metal Oxide)	6.25 W 350 mW	122 pF	DFN1006B-3	1.5 V 4.5 V	8 V	950 mV	-55 °C	150 °C

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General part information

P-Channel 30 V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3

Technical documentation and resources