Discrete Semiconductor Products

AOB416

Obsolete

MOSFET N-CH 100V 6.2A/45A TO263

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 6.2A/45A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	AOB416

Current - Continuous Drain (Id) @ 25°C	45 A, 6.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)	FET Type	Technology	Package / Case
Alpha & Omega Semiconductor Inc. AOB416	175 °C	-55 °C	4 V	Surface Mount	36 mOhm	7 V 10 V	6.2 A 45 A	150 W	2.5 W	24 nC	100 V	1450 pF	TO-263 (D2PAK)	25 V	N-Channel	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 6.2A (Ta), 45A (Tc) 2.5W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources