Discrete Semiconductor Products

PN4250A PBFREE

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TRANS GP BJT PNP 60V 0.5A 625MW 3-PIN TO-92 BOX

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Discrete Semiconductor Products

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TRANS GP BJT PNP 60V 0.5A 625MW 3-PIN TO-92 BOX

Technical Specifications

Parameters and characteristics for this part

Specification	PN4250A PBFREE

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Package / Case	Package / Case	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp PN4250A PBFREE	500 mA	150 °C	-65 °C	PNP	250	10 nA	TO-226AA	TO-226-3 TO-92-3	625 mW	Through Hole	250 mV	TO-92-3	60 V

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General part information

Bipolar (BJT) Transistor PNP 60 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources