Discrete Semiconductor Products

SI5936DU-T1-GE3

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MOSFET 2N-CH 30V 6A PPAK CHIPFET

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 6A PPAK CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI5936DU-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	320 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Dual
Power - Max [Max]	10.4 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerPAK® ChipFet Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Supplier Device Package	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI5936DU-T1-GE3	PowerPAK® ChipFet Dual	10.4 W	2 N-Channel (Dual)	11 nC	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	2.2 V	320 pF	6 A	30 V	Logic Level Gate	PowerPAK® ChipFET™ Dual	30 mOhm

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General part information

Mosfet Array 30V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual

Technical documentation and resources