Discrete Semiconductor Products

ER3002PT_T0_00001

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ISOLATION SUPERFAST RECOVERY REC

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Discrete Semiconductor Products

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ISOLATION SUPERFAST RECOVERY REC

Technical Specifications

Parameters and characteristics for this part

Specification	ER3002PT_T0_00001

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	1 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	35 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	950 mV

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Mounting Type	Speed	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Package / Case	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - Forward (Vf) (Max) @ If [Max]
Panjit International Inc. ER3002PT_T0_00001	35 ns	30 A	1 µA	Through Hole	200 mA 500 ns	1 Pair Common Cathode	200 V	TO-247AD (TO-3P)	TO-247-3	Standard	-55 °C	150 °C	950 mV

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General part information

Diode Array 1 Pair Common Cathode 200 V 30A Through Hole TO-247-3

Technical documentation and resources