Integrated Circuits (ICs)

BS2132F-E2

Obsolete

IC GATE DRVR HIGH-SIDE 28SOIC

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Integrated Circuits (ICs)

Obsolete

IC GATE DRVR HIGH-SIDE 28SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	BS2132F-E2

Channel Type	3-Phase
Driven Configuration	High-Side
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	0.8 V, 2.6 V
Mounting Type	Surface Mount
Number of Drivers	3
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	28-SOIC
Package / Case [x]	0.295 in
Package / Case [y]	7.5 mm
Rise / Fall Time (Typ) [custom]	125 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	28-SOP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	11.5 V

Part	Channel Type	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Gate Type	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH	Number of Drivers	Package / Case	Package / Case [x]	Package / Case [y]
Rohm Semiconductor BS2132F-E2	3-Phase	Surface Mount	-40 °C	125 °C	125 ns	50 ns	High-Side	600 V	Non-Inverting	IGBT N-Channel MOSFET	28-SOP	20 V	11.5 V	0.8 V 2.6 V	3	28-SOIC	0.295 in	7.5 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Side Gate Driver IC Non-Inverting 28-SOP

Technical documentation and resources