Discrete Semiconductor Products

VS-VSKD236/08PBF

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DIODE MOD GP 800V 115A MAGNAPAK

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Discrete Semiconductor Products

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DIODE MOD GP 800V 115A MAGNAPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKD236/08PBF

Current - Average Rectified (Io) (per Diode)	115 A
Current - Reverse Leakage @ Vr	20 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-MAGN-A-PAK™
Speed [Min]	200 mA, 500 ns
Supplier Device Package	MAGN-A-PAK®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Diode Configuration	Current - Reverse Leakage @ Vr	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Speed [Min]	Mounting Type	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Vishay General Semiconductor - Diodes Division VS-VSKD236/12PBF	1.2 kV	3-MAGN-A-PAK™	1 Pair Common Cathode	20 mA	MAGN-A-PAK®	115 A	200 mA 500 ns	Chassis Mount	Standard	-40 °C	150 °C
Vishay General Semiconductor - Diodes Division VS-VSKD236/04PBF	400 V	3-MAGN-A-PAK™	1 Pair Common Cathode	20 mA	MAGN-A-PAK®	115 A	200 mA 500 ns	Chassis Mount	Standard	-40 °C	150 °C
Vishay General Semiconductor - Diodes Division VS-VSKD236/08PBF	800 V	3-MAGN-A-PAK™	1 Pair Common Cathode	20 mA	MAGN-A-PAK®	115 A	200 mA 500 ns	Chassis Mount	Standard	-40 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 800 V 115A Chassis Mount 3-MAGN-A-PAK™

Technical documentation and resources