Discrete Semiconductor Products

ATP112-TL-H

Obsolete

MOSFET P-CH 60V 25A ATPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 25A ATPAK

Technical Specifications

Parameters and characteristics for this part

Specification	ATP112-TL-H

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	33.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Supplier Device Package	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature
ON Semiconductor ATP112-TL-H	ATPAK	40 W	ATPAK (2 leads+tab)	60 V	4 V	10 V	Surface Mount	43 mOhm	33.5 nC	1450 pF	P-Channel	20 V	25 A	MOSFET (Metal Oxide)	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 25A (Ta) 40W (Tc) Surface Mount ATPAK

Technical documentation and resources

No documents available