Discrete Semiconductor Products

VS-EPH3007L-N3

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DIODE GEN PURP 650V 30A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 650V 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-EPH3007L-N3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	37 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Technology	Current - Average Rectified (Io)	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division VS-EPH3007L-N3	2.1 V	650 V	30 µA	TO-247AD	Through Hole	Standard	30 A	TO-247-2	200 mA 500 ns	175 ░C	-55 °C	37 ns

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General part information

Diode 650 V 30A Through Hole TO-247AD

Technical documentation and resources