Discrete Semiconductor Products

PJA3434_R1_00001

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SOT-23, MOSFET

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Discrete Semiconductor Products

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SOT-23, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3434_R1_00001

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	67 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]
Panjit International Inc. PJA3434_R1_00001	SOT-23	1.4 nC	750 mA	1.2 V 4.5 V	67 pF	20 V	SC-59 SOT-23-3 TO-236-3	1 V	MOSFET (Metal Oxide)	10 V	400 mOhm	N-Channel	-55 °C	150 °C	Surface Mount	500 mW

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General part information

N-Channel 20 V 750mA (Ta) 500mW (Ta) Surface Mount SOT-23

Technical documentation and resources