Discrete Semiconductor Products

RN46A1(TE85L,F)

Obsolete

PNP + NPN BRT Q1BSR=22KOHM Q1BER

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

PNP + NPN BRT Q1BSR=22KOHM Q1BER

Technical Specifications

Parameters and characteristics for this part

Specification	RN46A1(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50, 70
Frequency - Transition	200 MHz, 250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-457, SC-74
Power - Max [Max]	300 mW
Resistor - Base (R1)	22 kOhms, 10 kOhms
Resistor - Emitter Base (R2)	22 kOhms, 10 kOhms
Supplier Device Package	SM6
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]
Toshiba Semiconductor and Storage RN46A1(TE85L,F)	10 kOhms 22 kOhms	SC-74 SOT-457	300 mV	SM6	200 MHz 250 MHz	100 mA	500 nA	Surface Mount	300 mW	1 NPN 1 PNP - Pre-Biased (Dual)	50 70	10 kOhms 22 kOhms	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz, 250MHz 300mW Surface Mount SM6

Technical documentation and resources

No documents available