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Discrete Semiconductor Products

LSIC2SD120D10A

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LITTELFUSE

SIC SCHOTTKY DIODE 1200V 10A TO263-2L/ TR

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power semiconductor sic schottky LSIC2SD120D10 image
Discrete Semiconductor Products

LSIC2SD120D10A

Active
LITTELFUSE

SIC SCHOTTKY DIODE 1200V 10A TO263-2L/ TR

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC2SD120D10A
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-263-2L
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 3.001m+
NewarkEach 500$ 6.261m+
TMEN/A 1$ 14.10<1d
5$ 12.72
25$ 11.24
100$ 10.09

Description

General part information

LSIC2SD120D10A Series

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.