Discrete Semiconductor Products

SIZ328DT-T1-GE3

LTB

MOSFET 2N-CH 25V 8PWR33

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET 2N-CH 25V 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ328DT-T1-GE3

Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs [x]	11.3 nC
Gate Charge (Qg) (Max) @ Vgs [x]	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF, 325 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	16.2 W, 15 W, 2.9 W, 3.6 W
Rds On (Max) @ Id, Vgs	10 mOhm, 15 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Power - Max	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [x]	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIZ328DT-T1-GE3	2 N-Channel (Dual)	-55 °C	150 °C	Surface Mount	8-PowerWDFN	2.9 W 3.6 W 15 W 16.2 W	2.5 V	10 mOhm 15 mOhm	11.3 nC	6.9 nC	25 V	MOSFET (Metal Oxide)	325 pF 600 pF	8-Power33 (3x3)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Surface Mount 8-Power33 (3x3)

Technical documentation and resources