Discrete Semiconductor Products

2SB1202T-E

Obsolete

TRANS PNP 50V 3A TP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 50V 3A TP

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1202T-E

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]	1 W
Supplier Device Package	TP
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Operating Temperature	Package / Case	Mounting Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor 2SB1202S-E	700 mV	3 A	150 MHz	150 °C	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	1 µA	50 V	TP	1 W	PNP	140 hFE
ON Semiconductor 2SB1202T-TL-E	700 mV	3 A	150 MHz	150 °C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	1 µA	50 V	TP-FA	1 W	PNP	200
ON Semiconductor 2SB1202T-E	700 mV	3 A	150 MHz	150 °C	IPAK TO-251-3 Short Leads TO-251AA	Through Hole	1 µA	50 V	TP	1 W	PNP	200

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 3 A 150MHz 1 W Through Hole TP

Technical documentation and resources