Discrete Semiconductor Products

SIRA00DP-T1-RE3

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MOSFET N-CH 30V 100A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 100A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA00DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC
Input Capacitance (Ciss) (Max) @ Vds	11700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIRA00DP-T1-RE3	-16 V 20 V	PowerPAK® SO-8	30 V	100 A	11700 pF	2.2 V	Surface Mount	1 mOhm	104 W	-55 °C	150 °C	MOSFET (Metal Oxide)	220 nC	N-Channel	4.5 V 10 V	PowerPAK® SO-8

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General part information

N-Channel 30 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources