Discrete Semiconductor Products

2SD1994ARA

Obsolete

TRANS NPN 50V 1A MT-2

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Discrete Semiconductor Products

Obsolete

TRANS NPN 50V 1A MT-2

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1994ARA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	3-SIP
Power - Max [Max]	1 W
Supplier Device Package	MT-2-A1
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition
Panasonic Electronic Components 2SD1994ARA	120	Through Hole	100 nA	1 W	1 A	400 mV	MT-2-A1	150 °C	NPN	3-SIP	50 V	200 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16

General part information

Bipolar (BJT) Transistor NPN 50 V 1 A 200MHz 1 W Through Hole MT-2-A1

Technical documentation and resources