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QS5U21TR
Discrete Semiconductor Products

QS5U21TR

Active
Rohm Semiconductor

TRANSISTOR: P-MOSFET + SCHOTTKY; UNIPOLAR; -20V; -1.5A; IDM: -6A

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QS5U21TR
Discrete Semiconductor Products

QS5U21TR

Active
Rohm Semiconductor

TRANSISTOR: P-MOSFET + SCHOTTKY; UNIPOLAR; -20V; -1.5A; IDM: -6A

Technical Specifications

Parameters and characteristics for this part

SpecificationQS5U21TR
Current - Continuous Drain (Id) @ 25°C1.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs4.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]325 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-5 Thin, TSOT-23-5
Power Dissipation (Max) [Max]1.25 W
Rds On (Max) @ Id, Vgs200 mOhm
Supplier Device PackageTSMT5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.28
TMEN/A 1$ 0.65
10$ 0.48
100$ 0.39
500$ 0.34

Description

General part information

QS5U21 Series

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Documents

Technical documentation and resources

P-channel Power MOSFETs selection guide

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Two-Resistor Model for Thermal Simulation

Thermal Design

QS5U21 Data Sheet

Data Sheet

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

About Export Regulations

Export Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Part Explanation

Application Note

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

About Flammability of Materials

Environmental Data

How to Use LTspice® Models

Schematic Design & Verification

How to Create Symbols for PSpice Models

Models

Condition of Soldering / Land Pattern Reference

Package Information

Moisture Sensitivity Level - Transistors

Package Information

Basics of Thermal Resistance and Heat Dissipation

Thermal Design

Certificate of not containing SVHC under REACH Regulation

Environmental Data

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Types and Features of Transistors

Application Note

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Inner Structure

Package Information

List of Transistor Package Thermal Resistance

Thermal Design

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Explanation for Marking

Package Information

Package Dimensions

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

Reliability Test Result

Manufacturing Data

ESD Data

Characteristics Data

Taping Information

Package Information

Notes for Temperature Measurement Using Thermocouples

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Thermal Design

What is a Thermal Model? (Transistor)

Thermal Design

What Is Thermal Design

Thermal Design

Anti-Whisker formation - Transistors

Package Information

Notes for Calculating Power Consumption:Static Operation

Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Thermal Design