Discrete Semiconductor Products
RBQ10BGE65ATL
ActiveRohm Semiconductor
65V, 10A, TO-252, CATHODE COMMON, LOW IRSCHOTTKY BARRIER DIODE
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Discrete Semiconductor Products
RBQ10BGE65ATL
ActiveRohm Semiconductor
65V, 10A, TO-252, CATHODE COMMON, LOW IRSCHOTTKY BARRIER DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | RBQ10BGE65ATL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 70 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-252GE |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 65 V |
| Voltage - Forward (Vf) (Max) @ If | 690 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RBQ10BGE65A Series
RBQ10BGE65A is the high reliability schottky barrier diode with low IRfor switching power supply.
Documents
Technical documentation and resources