Discrete Semiconductor Products

SIUD402ED-T1-GE3

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MOSFET N-CH 20V 1A PPAK 0806

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Discrete Semiconductor Products

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MOSFET N-CH 20V 1A PPAK 0806

Technical Specifications

Parameters and characteristics for this part

Specification	SIUD402ED-T1-GE3

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	16 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 0806
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	730 mOhm
Supplier Device Package	PowerPAK® 0806
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIUD402ED-T1-GE3	900 mV	-55 °C	150 °C	PowerPAK® 0806	1.25 W	N-Channel	Surface Mount	730 mOhm	8 V	PowerPAK® 0806	1.2 nC	MOSFET (Metal Oxide)	16 pF	1.5 V 4.5 V	1 A	20 V

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General part information

N-Channel 20 V 1A (Ta) 1.25W (Ta) Surface Mount PowerPAK® 0806

Technical documentation and resources