Discrete Semiconductor Products

FQU7P06TU

Obsolete

MOSFET P-CH 60V 5.4A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 5.4A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQU7P06TU

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC
Input Capacitance (Ciss) (Max) @ Vds	295 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	28 W, 2.5 W
Rds On (Max) @ Id, Vgs	451 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQU7P06TU	10 V	IPAK	IPAK TO-251-3 Short Leads TO-251AA	295 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	Through Hole	25 V	60 V	2.5 W 28 W	5.4 A	451 mOhm	4 V	P-Channel	8.2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Through Hole IPAK

Technical documentation and resources