Discrete Semiconductor Products

SI7270DP-T1-GE3

Obsolete

MOSFET 2N-CH 30V 8A PPAK SO8

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 8A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7270DP-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	17.8 W
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.8 V

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Power - Max [Max]	Technology	Drain to Source Voltage (Vdss)	Configuration	FET Feature	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7270DP-T1-GE3	21 nC	-55 °C	150 °C	21 mOhm	900 pF	PowerPAK® SO-8 Dual	2.8 V	Surface Mount	17.8 W	MOSFET (Metal Oxide)	30 V	2 N-Channel (Dual)	Logic Level Gate	PowerPAK® SO-8 Dual	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 8A 17.8W Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources