Discrete Semiconductor Products

BAS116T,115

Obsolete

DIODE GEN PURP 75V 215MA SC75

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 75V 215MA SC75

Technical Specifications

Parameters and characteristics for this part

Specification	BAS116T,115

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	215 mA
Current - Reverse Leakage @ Vr	5 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SC-75, SOT-416
Reverse Recovery Time (trr)	3 çs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SC-75
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

Part	Package / Case	Current - Average Rectified (Io)	Technology	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction	Capacitance @ Vr, F	Mounting Type	Speed	Speed
Freescale Semiconductor - NXP BAS116T,115	SC-75 SOT-416	215 mA	Standard	SC-75	75 V	5 nA	3 çs	1.25 V	150 °C	2 pF	Surface Mount	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 75 V 215mA Surface Mount SC-75

Technical documentation and resources