Discrete Semiconductor Products

BSP254A,126

Obsolete

MOSFET P-CH 250V 200MA TO92-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 250V 200MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	BSP254A,126

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	90 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	15 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Operating Temperature	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type
Freescale Semiconductor - NXP BSP254A,126	Through Hole	200 mA	10 V	250 V	2.8 V	TO-92-3	150 °C	1 W	MOSFET (Metal Oxide)	90 pF	TO-226-3 TO-92-3	20 V	15 Ohm	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 250 V 200mA (Ta) 1W (Ta) Through Hole TO-92-3

Technical documentation and resources