Discrete Semiconductor Products

PBSS5360XX

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PBSS5360X/SOT89/MPT3

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Discrete Semiconductor Products

Active

PBSS5360X/SOT89/MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5360XX

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80 hFE
Frequency - Transition	65 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	1.35 W
Qualification	AEC-Q101
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	550 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

60 V, 3 A PNP low VCEsat transistor

Part	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Qualification	Current - Collector (Ic) (Max) [Max]	Grade	Power - Max [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature
Freescale Semiconductor - NXP PBSS5360XF	60 V	65 MHz	PNP	-55 °C	150 °C	Surface Mount	AEC-Q101	3 A	Automotive	1.35 W	TO-243AA	100 nA	550 mV	150
Freescale Semiconductor - NXP PBSS5360ZX	60 V	130 MHz	PNP			Surface Mount		3 A		650 mW	TO-261-4 TO-261AA	100 nA	550 mV		SOT-223	150 °C
Freescale Semiconductor - NXP PBSS5360XX	60 V	65 MHz	PNP	-55 °C	150 °C	Surface Mount	AEC-Q101	3 A	Automotive	1.35 W	TO-243AA	100 nA	550 mV	80 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP low VCEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources