Discrete Semiconductor Products
RD3N06BATTL1
ActiveRohm Semiconductor
MOSFET, P-CHANNEL, 80V, 60A, TO-252 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RD3N06BATTL1
ActiveRohm Semiconductor
MOSFET, P-CHANNEL, 80V, 60A, TO-252 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RD3N06BATTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 101 W |
| Rds On (Max) @ Id, Vgs | 26 mOhm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RD3N06BAT Series
RD3N06BAT is a power MOSFET with low-on resistance and High power package, suitable for Switching and Motor drives applications.
Documents
Technical documentation and resources