Discrete Semiconductor Products

SQP60N06-15_GE3

Obsolete

MOSFET N-CH 60V 56A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 56A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SQP60N06-15_GE3

Current - Continuous Drain (Id) (Tc)	56 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2480 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	107 W
Qualification	AEC-Q101
Rds On (Max)	15 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

Part	Current - Continuous Drain (Id) (Tc)	Mounting Type	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Technology	Package Name	Vgs(th) (Max)	Gate Charge (Max)	Power Dissipation (Max)	Grade	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs (Max)
Vishay Dale SQP60N06-15_GE3	56 A	Through Hole	AEC-Q101	10 V	60 V	15 mOhm	TO-220-3	2480 pF	MOSFET (Metal Oxide)	TO-220AB	3.5 V	50 nC	107 W	Automotive	-55 °C	175 °C	N-Channel	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 60 V 56A (Tc) 107W (Tc) Through Hole TO-220AB

Technical documentation and resources