
Deep-Dive with AI
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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSP51 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1 W |
| Supplier Device Package | SOT-223-4 |
| Vce Saturation (Max) @ Ib, Ic | 1.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BSP51 Series
Bipolar (BJT) Transistor NPN - Darlington 80 V 500 mA 1 W Surface Mount SOT-223-4
Documents
Technical documentation and resources
No documents available