Discrete Semiconductor Products

RN1910FE(T5L,F,T)

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TRANS 2NPN PREBIAS 0.1W ES6

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Discrete Semiconductor Products

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TRANS 2NPN PREBIAS 0.1W ES6

Technical Specifications

Parameters and characteristics for this part

Specification	RN1910FE(T5L,F,T)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Power - Max [Max]	100 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	ES6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-363(US6)

Part	Frequency - Transition	Package / Case	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Power - Max [Max]	Transistor Type	Mounting Type	Qualification	Grade
Toshiba Semiconductor and Storage RN1910FE(T5L,F,T)	250 MHz	SOT-563 SOT-666	100 nA	120	50 V	4.7 kOhms	100 mA	300 mV	ES6	100 mW	2 NPN - Pre-Biased (Dual)	Surface Mount
Toshiba Semiconductor and Storage RN1910,LF(CT	250 MHz	6-TSSOP SC-88 SOT-363	100 nA	120	50 V	4.7 kOhms	100 mA	300 mV	US6	100 mW	2 NPN - Pre-Biased (Dual)	Surface Mount
Toshiba Semiconductor and Storage RN1910,LXHF(CT	250 MHz	6-TSSOP SC-88 SOT-363	100 nA	120	50 V	4.7 kOhms	100 mA	300 mV	US6	200 mW	2 NPN - Pre-Biased (Dual)	Surface Mount	AEC-Q101	Automotive
Toshiba Semiconductor and Storage RN1910FE,LF(CT	250 MHz	SOT-563 SOT-666	100 nA	120	50 V	4.7 kOhms	100 mA	300 mV	ES6	100 mW	2 NPN - Pre-Biased (Dual)	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar Transistors, NPN x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-363(US6)

Technical documentation and resources