Discrete Semiconductor Products

PEMB9,115

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TRANS PREBIAS 2PNP 50V SOT666

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Discrete Semiconductor Products

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TRANS PREBIAS 2PNP 50V SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PEMB9,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Qualification	AEC-Q101
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-666
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic [Max]	100 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Transistor Type	Grade	Qualification
Freescale Semiconductor - NXP PEMB9,315	47000 Ohms	SOT-563 SOT-666	SOT-666	50 V	100 mA	1 µA	Surface Mount	100 mV	100	300 mW	2 PNP - Pre-Biased (Dual)
Freescale Semiconductor - NXP PEMB9,115	47000 Ohms	SOT-563 SOT-666	SOT-666	50 V	100 mA	1 µA	Surface Mount	100 mV	100	300 mW	2 PNP - Pre-Biased (Dual)	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Technical documentation and resources