Discrete Semiconductor Products

SSM3J64CTC,L3F

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MOSFET P-CH 12V 1A CST3C

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Discrete Semiconductor Products

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MOSFET P-CH 12V 1A CST3C

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J64CTC,L3F

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	370 mOhm
Supplier Device Package	CST3C
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type
Toshiba Semiconductor and Storage SSM3J64CTC,L3F	1.2 V 4.5 V	P-Channel	SC-101 SOT-883	MOSFET (Metal Oxide)	370 mOhm	CST3C	500 mW	10 V	1 V	150 °C	50 pF	1 A	12 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 1A (Ta) 500mW (Ta) Surface Mount CST3C

Technical documentation and resources