FFSH30120ADN-F155
ActiveSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 30 A, 1200 V, D1, TO-247-3L
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FFSH30120ADN-F155
ActiveSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 30 A, 1200 V, D1, TO-247-3L
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Technical Specifications
Parameters and characteristics for this part
| Specification | FFSH30120ADN-F155 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 15 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 11.99 | |
| 10 | $ 9.13 | |||
| Newark | Each | 25 | $ 14.91 | |
| 50 | $ 14.16 | |||
| 100 | $ 12.94 | |||
| 250 | $ 12.32 | |||
| 900 | $ 11.55 | |||
| ON Semiconductor | N/A | 1 | $ 8.40 | |
Description
General part information
FFSH30120ADN-F155 Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Documents
Technical documentation and resources
