Discrete Semiconductor Products

MCP200N06Y-BP

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N-CHANNEL MOSFET,TO-220AB(H)

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET,TO-220AB(H)

Technical Specifications

Parameters and characteristics for this part

Specification	MCP200N06Y-BP

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	4165 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	260 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	TO-220AB (H)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology
Micro Commercial Components MCP200N06Y-BP	260 W	3.2 mOhm	65 nC	TO-220AB (H)	-55 °C	150 °C	4 V	N-Channel	TO-220-3	10 V	60 V	Through Hole	4165 pF	200 A	20 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 200A 260W Through Hole TO-220AB (H)

Technical documentation and resources

No documents available