Discrete Semiconductor Products

SI7218DN-T1-GE3

Obsolete

MOSFET 2N-CH 30V 24A PPAK 1212

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 24A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7218DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	23 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Configuration	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology
Vishay General Semiconductor - Diodes Division SI7218DN-T1-E3	700 pF	24 A	3 V	2 N-Channel (Dual)	23 W	-55 °C	150 °C	PowerPAK® 1212-8 Dual	25 mOhm	17 nC	Surface Mount	PowerPAK® 1212-8 Dual	30 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI7218DN-T1-GE3	700 pF	24 A	3 V	2 N-Channel (Dual)	23 W	-55 °C	150 °C	PowerPAK® 1212-8 Dual	25 mOhm	17 nC	Surface Mount	PowerPAK® 1212-8 Dual	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 24A 23W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources