Discrete Semiconductor Products

RSH110N03TB1

Obsolete

MOSFET N-CH 30V 11A 8SOP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 11A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	RSH110N03TB1

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1300 pF
Mounting Type	Surface Mount
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power Dissipation (Max)	2 W
Rds On (Max) @ Id, Vgs	10.7 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Package / Case	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package
Rohm Semiconductor RSH110N03TB1	Surface Mount	MOSFET (Metal Oxide)	17 nC	30 V	1300 pF	2.5 V	11 A	2 W	0.154 in	8-SOIC	3.9 mm	N-Channel	10.7 mOhm	8-SOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.56

General part information

N-Channel 30 V 11A (Ta) 2W (Ta) Surface Mount 8-SOP

Technical documentation and resources

No documents available