Discrete Semiconductor Products

PCDP1665GC_T0_00601

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DIODE SIL CARB 650V 16A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 16A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP1665GC_T0_00601

Capacitance @ Vr, F	446 pF
Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Panjit International Inc. PCDP1665GC_T0_00601	SiC (Silicon Carbide) Schottky	TO-220AC	TO-220-2	1.8 V	100 µA	16 A	446 pF	Through Hole	175 ░C	-55 C	200 mA 500 ns	650 V

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General part information

Diode 650 V 16A Through Hole TO-220AC

Technical documentation and resources

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