Discrete Semiconductor Products

SQA405EJ-T1_GE3

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MOSFET P-CH 40V 10A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 40V 10A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SQA405EJ-T1_GE3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1815 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max) [Max]	13.6 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	FET Type	Qualification	Grade	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SQA405EJ-T1_GE3	1815 pF	2.5 V	20 V	PowerPAK® SC-70-6	40 V	13.6 W	P-Channel	AEC-Q101	Automotive	MOSFET (Metal Oxide)	PowerPAK® SC-70-6	4.5 V 10 V	Surface Mount	35 mOhm	-55 °C	175 ░C	10 A

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General part information

P-Channel 40 V 10A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources