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Discrete Semiconductor Products

RD3L220SNFRATL

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Rohm Semiconductor

MOSFET, N-CH, 60V, 22A, 150DEG C, 20W ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsAnti-Whisker formation - Transistors RD3L220SNFRA Data Sheet +42

Product dimension image

Discrete Semiconductor Products

RD3L220SNFRATL

Active

Rohm Semiconductor

MOSFET, N-CH, 60V, 22A, 150DEG C, 20W ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsAnti-Whisker formation - Transistors RD3L220SNFRA Data Sheet +42

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3L220SNFRATL

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1679	$ 2.83
Newark	Each (Supplied on Cut Tape)	1	$ 2.76
		10	$ 1.78
		25	$ 1.61
		50	$ 1.45
		100	$ 1.28
		250	$ 1.27
		500	$ 1.06
		1000	$ 0.96

Description

General part information

RD3L220SNFRA Series

RD3L220SNFRA is a automotive grade power MOSFET with Low on - resistance, suitable for switching.

Documents

Technical documentation and resources

Anti-Whisker formation - Transistors

Package Information

RD3L220SNFRA Data Sheet

Package Dimensions

Package Information

Report of SVHC under REACH Regulation

Environmental Data

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Two-Resistor Model for Thermal Simulation

Notes for Calculating Power Consumption:Static Operation

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

What Is Thermal Design

Moisture Sensitivity Level - Transistors

Package Information

About Export Regulations

Export Information

Reliability Test Result

Manufacturing Data

TO-252_TL Taping Information

Package Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

θ<sub>JC</sub> and Ψ<sub>JT</sub>

How to Create Symbols for PSpice Models

Basics of Thermal Resistance and Heat Dissipation

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Judgment Criteria of Thermal Evaluation

Notes for Temperature Measurement Using Thermocouples

Condition of Soldering / Land Pattern Reference

Package Information

Inner Structure

Package Information

Part Explanation

Application Note

PCB Layout Thermal Design Guide

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Method for Monitoring Switching Waveform

Schematic Design & Verification

How to Use LTspice® Models

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Types and Features of Transistors

Application Note

What is a Thermal Model? (Transistor)

Compliance of the RoHS directive

Environmental Data

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

RD3L220SNFRA ESD Data

Characteristics Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Precautions When Measuring the Rear of the Package with a Thermocouple

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Explanation for Marking

Package Information

RD3L220SNFRA Series

Nch 60V 22A Power MOSFET

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Grade	Qualification	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Rohm Semiconductor RD3L220SNFRATL	26 mOhm	20 W	60 V	150 °C	Surface Mount	30 nC	4 V	10 V	N-Channel	22 A	3 V	TO-252	20 V	Automotive	AEC-Q101	MOSFET (Metal Oxide)	1500 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3