Discrete Semiconductor Products

SI2351DS-T1-E3

Obsolete

MOSFET P-CH 20V 2.8A SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 2.8A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2351DS-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.1 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology
Vishay General Semiconductor - Diodes Division SI2351DS-T1-GE3	Surface Mount	SC-59 SOT-23-3 TO-236-3	2.8 A	20 V	1.5 V	115 mOhm	5.1 nC	SOT-23-3 (TO-236)	P-Channel	250 pF	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SI2351DS-T1-E3	Surface Mount	SC-59 SOT-23-3 TO-236-3	2.8 A	20 V	1.5 V	115 mOhm	5.1 nC	SOT-23-3 (TO-236)	P-Channel	250 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 2.8A (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available