Discrete Semiconductor Products
RH7G04DBKFRATCB
ActiveRohm Semiconductor
NCH 40V 40A, DFN3333T8LSAB, POWER MOSFET FOR AUTOMOTIVE
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Discrete Semiconductor Products
RH7G04DBKFRATCB
ActiveRohm Semiconductor
NCH 40V 40A, DFN3333T8LSAB, POWER MOSFET FOR AUTOMOTIVE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RH7G04DBKFRATCB |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 7.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 345 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 33 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 12.6 mOhm |
| Supplier Device Package | DFN3333T8LSAB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3000 | $ 1.71 | |
Description
General part information
RH7G04DBKFRA Series
RH7G04DBKFRA is an automotive grade MOSFET that is AEC-Q101 qualified. Ideal for ADAS and Info. and Lighting and Body.
Documents
Technical documentation and resources