Zenode.ai Logo
Beta
PG-TO263-7
Discrete Semiconductor Products

IRL60SC216ARMA1

LTB
INFINEON

STRONGIRFET™ N-CHANNEL ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.5 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

PG-TO263-7
Discrete Semiconductor Products

IRL60SC216ARMA1

LTB
INFINEON

STRONGIRFET™ N-CHANNEL ; D2PAK 7PIN TO-263 7PIN PACKAGE; 1.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL60SC216ARMA1
Current - Continuous Drain (Id) @ 25°C324 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs218 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]16000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)2.4 W, 375 W
Rds On (Max) @ Id, Vgs1.5 mOhm
Supplier Device PackagePG-TO263-7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 5.38
Digi-Reel® 1$ 5.38
N/A 0$ 5.33
Tape & Reel (TR) 800$ 2.09

Description

General part information

IRL60 Series

Infineon’s latest logic level 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on)making them the ideal solution for high current battery powered applications.